发明名称 |
Methods Of Forming Semiconductor Devices |
摘要 |
Methods of forming a semiconductor device are provided. The methods may include forming a second insulation pattern on a first insulation pattern. The first insulation pattern may cover a plurality of conductive structures, and may include a hole therein. The second insulation pattern may include a trench therein that is connected with the hole. The methods may also include forming a spacer on sidewalls of the hole and the trench. The methods may further include forming a wiring structure in the hole and the trench. |
申请公布号 |
US2012164831(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201113313172 |
申请日期 |
2011.12.07 |
申请人 |
KIM SUN-YOUNG;SONG JUN-EUI;LIM TAE-WAN |
发明人 |
KIM SUN-YOUNG;SONG JUN-EUI;LIM TAE-WAN |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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