| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion element including a buffer layer capable of covering an underlying layer substantially uniformly, and having a high in-plane uniformity of photoelectric conversion efficiency. <P>SOLUTION: In a photoelectric conversion element 1, a lower electrode layer 20, a photoelectric conversion semiconductor layer 30 containing, as a main component, at least one kind of compound semiconductor of chalcopyrite structure consisting of a group Ib element, a group IIIb element and a group VIb element, a buffer layer 40, and a translucent conductive layer 50 are laminated sequentially on a substrate 10. Carbonyl ions C are provided on the surface 40s of the buffer layer 40 on the translucent conductive layer 50 side. The buffer layer 40 is a thin film layer containing a ternary compound consisting of a metal not containing cadmium, oxygen, and sulphur, and having an average thickness of 10 nm or more and 70 nm or less. <P>COPYRIGHT: (C)2012,JPO&INPIT |
