| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain decoupling capacitance that does not affect a chip size in a semiconductor device. <P>SOLUTION: A semiconductor device comprises substrates 1 and 10, a high-concentration diffusion layer region 11, a first well 4, and a second well 3. The substrates 1 and 10 have a first conductivity type. The high-concentration diffusion layer region 11 is formed on the substrates 1 and 10 and has the first conductivity type. The first well 4 is formed on the substrates 1 and 10, is provided on one side of the high-concentration diffusion layer region 11, and has the first conductivity type. The second well 3 is formed on the substrates 1 and 10, is provided on the other side of the high-concentration diffusion layer region 11, and has a second conductivity type that is the reverse conductivity type with respect to the first conductivity type. Decoupling capacitance is formed between the second well 3 and the high-concentration diffusion layer region 11 and between the second well 3 and the substrates 1 and 10. <P>COPYRIGHT: (C)2012,JPO&INPIT |
