发明名称 |
IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE |
摘要 |
A method and apparatus for forming low-k dielectric layers that include air gaps is provided. In one embodiment, a method of processing a substrate is provided. The method comprises disposing a substrate within a processing region, reacting an organosilicon compound, with an oxidizing gas, and a porogen providing precursor in the presence of a plasma to deposit a porogen containing low-k dielectric layer comprising silicon, oxygen, and carbon on the substrate, depositing a porous dielectric capping layer comprising silicon, oxygen and carbon on the porogen containing low-k dielectric layer, and ultraviolet (UV) curing the porogen containing low-k dielectric layer and the porous dielectric capping layer to remove at least a portion of the porogen from the porogen containing low-k dielectric layer through the porous dielectric capping layer to convert the porogen containing low-k dielectric layer to a porous low-k dielectric layer having air gaps. |
申请公布号 |
WO2012087493(A2) |
申请公布日期 |
2012.06.28 |
申请号 |
WO2011US62197 |
申请日期 |
2011.11.28 |
申请人 |
APPLIED MATERIALS, INC.;YIM, KANG SUB;XU, JIN;NGO, SURE;DEMOS, ALEXANDROS T. |
发明人 |
YIM, KANG SUB;XU, JIN;NGO, SURE;DEMOS, ALEXANDROS T. |
分类号 |
H01L21/31;H01L21/3105 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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