发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method for manufacturing a semiconductor device includes the steps of: forming a first gate stack on a semiconductor substrate, the first gate stack includes a first gate conductor and a first gate dielectric between the first gate conductor and the semiconductor substrate; forming source/drain regions on the semiconductor substrate; forming a multilayer structure including at least one sacrificial layer and at least one insulating layer under the sacrificial layer on the semiconductor substrate and the first gate stack; performing a first RIE on the multilayer structure; performing a second RIE on the multilayer structure; selectively etching the first gate stack with respect to the insulating layer, in which the first gate conductor is removed and an opening is formed in the insulating layer; and forming a second gate conductor in the opening. |
申请公布号 |
US2012164808(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201113129419 |
申请日期 |
2011.02.17 |
申请人 |
YIN HUAXIANG;XU QIUXIA;XU GAOBO;MENG LINGKUAN;YANG TAO;CHEN DAPENG;INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OFSCIENCES |
发明人 |
YIN HUAXIANG;XU QIUXIA;XU GAOBO;MENG LINGKUAN;YANG TAO;CHEN DAPENG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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