发明名称 SYSTEM AND APPARATUS FOR FLOWABLE DEPOSITION IN SEMICONDUCTOR FABRICATION
摘要 Electronic device fabrication processes, apparatuses and systems for flowable gap fill or flowable deposition techniques are described. In some implementations, a semiconductor fabrication chamber is described which is configured to maintain a semiconductor wafer at a temperature near 0° C. while maintaining most other components within the fabrication chamber at temperatures on the order of 5-10° C. or higher than the wafer temperature.
申请公布号 US2012161405(A1) 申请公布日期 2012.06.28
申请号 US201113329078 申请日期 2011.12.16
申请人 MOHN JONATHAN D.;TE NIJENHUIS HARALD;HAMILTON SHAWN M.;MADRIGAL KEVIN;LINGAMPALLI RAMKISHAN RAO 发明人 MOHN JONATHAN D.;TE NIJENHUIS HARALD;HAMILTON SHAWN M.;MADRIGAL KEVIN;LINGAMPALLI RAMKISHAN RAO
分类号 B23B31/02 主分类号 B23B31/02
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