发明名称 |
EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE |
摘要 |
Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free. |
申请公布号 |
US2012161152(A1) |
申请公布日期 |
2012.06.28 |
申请号 |
US201213414104 |
申请日期 |
2012.03.07 |
申请人 |
MIYOSHI MAKOTO;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;MAEHARA SOTA;TANAKA MITSUHIRO;NGK INSULATORS, LTD. |
发明人 |
MIYOSHI MAKOTO;SUMIYA SHIGEAKI;ICHIMURA MIKIYA;MAEHARA SOTA;TANAKA MITSUHIRO |
分类号 |
H01L29/205;H01L21/20;H01L29/04 |
主分类号 |
H01L29/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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