| 摘要 |
<p>A waveguide photodetector and forming method thereof are provided. The method of forming a waveguide photodetector includes: forming a waveguide on a silicon-on-insulator(SOI) substrate(100), depositing a first oxide coating over the waveguide and on the SOI substrate(102), creating a seed window through the first oxide coating to a bulk silicon layer of the SOI substrate(104), depositing a photodetector material into the seed window and on top of the first oxide coating over the waveguide(106), depositing a second oxide coating over the photodetector material and over the first oxide coating deposited over the waveguide and on the SOI substrate(108), and applying thermal energy to liquefy the photodetector material(110). Thereby, the leakage current characteristics of the waveguide photodetector are improved.</p> |
