<p>The purpose of the present invention is to provide a sputtering device which enables the improvement in film formation rate while preventing the damage of the surface of a substrate. The sputtering device comprises: a magnetic field generation section (1a, 1b) in which a pair of members are so arranged as to face each other apart from each other by a given space and can generate a magnetic field in the space; a film-formed member holding part in which a member (6) on which a film is to be formed can be arranged so as to face the space on the side of the pair of members; a target member (2) which is arranged in the space and has a target surface (2a) that is inclined toward the member (6); and an electric power supply section (3) which is connected to the target member (2) and can apply a voltage to the target member (2).</p>
申请公布号
WO2012086229(A1)
申请公布日期
2012.06.28
申请号
WO2011JP60847
申请日期
2011.05.11
申请人
MITSUBISHI HEAVY INDUSTRIES, LTD.;YOSHIDA, MITSUHIRO;YAMAGUCHI, RYUTA