| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a SiC semiconductor device capable of relaxing current concentration during avalanche breakdown and capable of improving breakdown voltage and avalanche resistance. <P>SOLUTION: An n<SP POS="POST">-</SP>-type SiC epitaxial layer 4 is formed on an n<SP POS="POST">+</SP>-type SiC substrate 2, and a field insulating film 5 is formed on the SiC epitaxial layer 4. An anode electrode 7 is Schottky-joined onto a first surface of the SiC epitaxial layer 4 so as to penetrate the field insulating film 5. On the other hand, a cathode electrode 3 is ohmic-contacted to a second surface of the SiC substrate 2. This forms a Schottky barrier diode 1. In the Schottky barrier diode 1, a guard ring 13 contacting a Schottky metal 9 of the anode electrode 7 is formed in a surface portion of the SiC epitaxial layer 4. The p-type impurity concentration in a surface portion 17 of the guard ring 13 is set to be smaller than the n-type impurity concentration. <P>COPYRIGHT: (C)2012,JPO&INPIT |
