| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a GaN based light emitting element of large chip type which solves the above stated problem and contains a novel light emission pattern, with improved etching workability. <P>SOLUTION: A laminate S is formed on a substrate 1, and a plurality of recesses h are formed on the laminate S from upper surface, so that an n type layer is exposed in the recesses. A p electrode P2 is provided in a region left out on the upper surface of the laminate S, and the p electrode is covered with an insulator layer m. An n electrode P1 is provided in an n type layer exposed in the recesses, a conductor layer P3 which connects the interiors of the recesses across the insulator layer m connects the n electrodes together, to provide a large chip type nitride semiconductor light-emitting element in which a light emitting part is spread in network. The laminate S comprises a nitride semiconductor, and has, for example, a lamination structure in which a light emitting layer 3 is sandwiched between an n type layer 2 and a p type layer 4, with the n type layer positioned on the substrate side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
