PHOTODIODE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To eliminate a current leakage problem on a mesa portion sidewall including a light absorption layer constituting a photodiode.

SOLUTION: The photodiode at least includes: a lower contact layer 102 composed of a first conductivity type first compound semiconductor formed on a substrate 101; an electron transit layer 103 composed of the first compound semiconductor formed on the lower contact layer 102; a light absorption layer 104 composed of a second compound semiconductor formed on the electron transit layer 103; an upper contact layer 105 composed of a second conductivity type first compound semiconductor formed on the light absorption layer 104; and a first electrode 106 formed on the lower contact layer 102 and a second electrode 107 formed on the upper contact layer 105. The electron transit layer 103 formed on the substrate 101 is formed in a wider area than the light absorption layer 104 and the upper contact layer 105.

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