| 发明名称 |
SEMICONDUCTOR DEVICE, LIQUID CRYSTAL MODULE, ELECTRONIC EQUIPMENT, AND WIRING |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a dry etching method for forming wiring with a large selection ratio to a foundation and with a taper shape. <P>SOLUTION: A film made of a conductive material is formed on a substrate. Dry etching is performed to the film made of the conductive material by using an ICP (Inductively Coupled Plasma) etching device to form wiring with a taper angle equal to or less than 60°. Alternatively, a film made of a conductive material is formed on a substrate. Dry etching is performed to the film made of the conductive material by using the ICP etching device to form gate wiring with a taper angle equal to or less than 60°. A gate insulating film is formed on the gate wiring. An active layer is formed on the gate insulating film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
| 申请公布号 |
JP2012124508(A) |
申请公布日期 |
2012.06.28 |
| 申请号 |
JP20120014497 |
申请日期 |
2012.01.26 |
| 申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
SUZAWA HIDEOMI;ONO KOJI |
| 分类号 |
H01L29/786;H01L21/28;H01L21/3065;H01L21/3213;H01L21/336;H01L21/768;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/41 |
主分类号 |
H01L29/786 |
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