MASK BLANK, TRANSFER MASK AND MANUFACTURING METHOD FOR TRANSFER MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A mask blank, a transferring mask, a method for manufacturing the transferring mask, and a method for manufacturing a semiconductor device are provided to form a light shielding layer based on an upper layer and a lower layer and to adjust the rate of etching rate of the lower layer to the etching rate of the upper layer. CONSTITUTION: A mask blank and a transferring mask include a light shielding layer(2). The light shielding layer is at least two layered structure composed of an upper layer and a lower layer. The lower layer is the side of a light transmitting substrate. The lower layer is based on transition metals, silicon, and nitrogen and substantially excludes oxygen. The upper layer is based on transition metals, silicon, and nitrogen. The upper layer substantially excludes oxygen except for the surface part of the upper layer. The nitrogen content difference of the upper layer and the lower layer is lower than 30 atomic%. The etching rate of the lower layer with respect to the etching rate of the upper layer is between 1.0 and 5.0, inclusively.