发明名称 HIGH FREQUENCY SEMICONDUCTOR SWITCH
摘要 <p>PURPOSE: A high frequency semiconductor switch is provided to reduce an insertion loss by uniformly distributing a voltage in gate wiring. CONSTITUTION: Drain wiring(70) is extended in parallel to source wiring(60). A gate has a parallel part. The parallel part is extended in parallel to the source wiring and the drain wiring. Gate wiring(80) applies a voltage to a gate. A gate via(82) electrically connects the gate and the gate wiring.</p>
申请公布号 KR20120069527(A) 申请公布日期 2012.06.28
申请号 KR20110087274 申请日期 2011.08.30
申请人 SAMSUNG ELECTRO-MECHANICS CO., LTD. 发明人 KIM, SANG HEE;BAE, HYO KUN;TSUYOSHI SUGIURA
分类号 H01L29/78;H01L21/336;H03K17/693 主分类号 H01L29/78
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