发明名称 |
HIGH FREQUENCY SEMICONDUCTOR SWITCH |
摘要 |
<p>PURPOSE: A high frequency semiconductor switch is provided to reduce an insertion loss by uniformly distributing a voltage in gate wiring. CONSTITUTION: Drain wiring(70) is extended in parallel to source wiring(60). A gate has a parallel part. The parallel part is extended in parallel to the source wiring and the drain wiring. Gate wiring(80) applies a voltage to a gate. A gate via(82) electrically connects the gate and the gate wiring.</p> |
申请公布号 |
KR20120069527(A) |
申请公布日期 |
2012.06.28 |
申请号 |
KR20110087274 |
申请日期 |
2011.08.30 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
KIM, SANG HEE;BAE, HYO KUN;TSUYOSHI SUGIURA |
分类号 |
H01L29/78;H01L21/336;H03K17/693 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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