| 摘要 |
<P>PROBLEM TO BE SOLVED: To raise precision of a resistance value for improved reliability by forming a resistive element of a required shape on an element separation oxide film. <P>SOLUTION: In the semiconductor device, a plurality of resistive elements 4 are formed on an element separation oxide film 2 in a predetermined region formed on the surface of a semiconductor substrate 1. An active region 3 is provided at the position close to the resistive element 4. The element separation oxide film 2 near the resistive element 4 can be partitioned to be a required range. A recess is suppressed from being formed at the central part of the element separation oxide film 2 when polishing the element separation oxide film 2 by CMP method, resulting in improved dimension precision in the shape of the resistance element 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
