发明名称 |
WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME |
摘要 |
Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. |
申请公布号 |
WO2012039555(A3) |
申请公布日期 |
2012.06.28 |
申请号 |
WO2011KR06544 |
申请日期 |
2011.09.05 |
申请人 |
SEOUL SEMICONDUCTOR CO., LTD.;SEO, WON CHEOL;KAL, DAE SUNG |
发明人 |
SEO, WON CHEOL;KAL, DAE SUNG |
分类号 |
H01L33/44;H01L33/02;H01L33/62 |
主分类号 |
H01L33/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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