发明名称 WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME
摘要 Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack.
申请公布号 WO2012039555(A3) 申请公布日期 2012.06.28
申请号 WO2011KR06544 申请日期 2011.09.05
申请人 SEOUL SEMICONDUCTOR CO., LTD.;SEO, WON CHEOL;KAL, DAE SUNG 发明人 SEO, WON CHEOL;KAL, DAE SUNG
分类号 H01L33/44;H01L33/02;H01L33/62 主分类号 H01L33/44
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