发明名称 MULTILAYER DIELECTRIC MEMORY DEVICE
摘要 A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship.
申请公布号 WO2012087622(A2) 申请公布日期 2012.06.28
申请号 WO2011US64262 申请日期 2011.12.09
申请人 INTEL CORPORATION;MIN, KYU S. 发明人 MIN, KYU S.
分类号 H01L27/108;H01L21/8242 主分类号 H01L27/108
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