发明名称 |
MULTILAYER DIELECTRIC MEMORY DEVICE |
摘要 |
A memory device has multiple dielectric barrier regions. A memory device has multiple barrier regions that provide higher or lower current-voltage slope compared to a memory device having a single barrier region. The device also has electrode regions that provide further control over the current-voltage relationship. |
申请公布号 |
WO2012087622(A2) |
申请公布日期 |
2012.06.28 |
申请号 |
WO2011US64262 |
申请日期 |
2011.12.09 |
申请人 |
INTEL CORPORATION;MIN, KYU S. |
发明人 |
MIN, KYU S. |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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