发明名称 SENSING MEMORY CELLS
摘要 <p>The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying a ramping voltage to a control gate of a memory cell and to an analog-to-digital converter (ADC). The aforementioned embodiment of a method also includes detecting an output of the ADC at least partially in response to when the ramping voltage causes the memory cell to trip sense circuitry.</p>
申请公布号 KR101160760(B1) 申请公布日期 2012.06.28
申请号 KR20107014751 申请日期 2008.12.01
申请人 发明人
分类号 G11C16/26;G11C7/16;G11C16/30 主分类号 G11C16/26
代理机构 代理人
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