| 摘要 |
#CMT# #/CMT# The sensor has a pixel comprising insulated gates (G1i-G4i) covering a lightly doped epitaxial semiconducting layer (12). The gates are separated from gates of an adjacent pixel by narrow uncovered gaps (PH1i-PH4i) located above an N-type doped narrow region (14) that is covered by a P-type doped superficial region (16), where width of the narrow gap between the adjacent gates are such that internal potential of the narrow region is modified in the whole width of the narrow gap when one gate adjacent to the narrow gap receives alternation of high and low potentials. #CMT#USE : #/CMT# Time-delay integration charge-transfer image sensor for use in a scanner, in industrial control application, application of earth observations from space or medical application e.g. dental application or mammography application. #CMT#ADVANTAGE : #/CMT# The design of the sensor enables producing the sensor that operates according to the principle of charge-transfer structures, using a technology that is very simple and compatible with complementary-metal-oxide-semiconductor technology circuits. The design of the sensor allows a large degree of freedom of choice for the doping levels of the semiconducting regions situated between the gates, and optimizes the directional transfer of charges without loss. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a sectional view of a structure of a multilinear photosensitive sensor perpendicular to the direction of lines of pixels. G1i-G4i : Insulated gates PH1i-PH4i : Narrow uncovered gaps 10 : Semiconducting substrate 12 : Lightly doped epitaxial semiconducting layer 14 : N-type doped narrow regions 16 : P-type doped superficial region. |
