METHOD FOR MANUFACTURING A LAYERED STRUCTURE FOR DOUBLE-PLATE CAPACITORS

摘要

The method comprises the following steps: forming regularly arranged seed-crystal projections on the surface of a silicon substrate; growing uniform columnar nanoelements on the seed-crystal projections using the GLAD method; and applying layers of a dielectric material and an electrically conducting material to the surface of the columnar nanoelements and to those portions of the surface which are not occupied by the above-mentioned nanoelements using the ALD or PEALD method.