发明名称 PHOTOSENSITIVE RESIN COMPOSITION FOR SURFACE PROTECTIVE FILM OF SEMICONDUCTOR ELEMENT OR INTERLAYER INSULATING FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide a phenolic resin composition, which shows high elongation even when the composition is applied to a semiconductor device and cured by heat at 250&deg;C or lower, and can be used as an alternative material of a polyimide resin or a polybenzoxazole resin, and to provide a method for producing a cured relief pattern using the composition, and a semiconductor device having the cured relief pattern. <P>SOLUTION: A photosensitive resin composition for a surface protective film of a semiconductor element or an interlayer insulating film contains the following ingredients in a solvent: 100 pts.mass of a phenolic resin (A) having a biphenyl diyl structure in the main chain; 1 to 30 pts.mass of a photoacid generator (B); and 1 to 60 pts.mass of a compound (C) capable of reacting with the ingredient (A) by an acid generated by the photoacid generator (B) or heat. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012123378(A) 申请公布日期 2012.06.28
申请号 JP20110247336 申请日期 2011.11.11
申请人 ASAHI KASEI E-MATERIALS CORP 发明人 SASAKI TAKAHIRO;RI GUN
分类号 G03F7/023;G03F7/004;G03F7/022;H01L21/027 主分类号 G03F7/023
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