发明名称 BIAS CIRCUIT FOR POWER AMPLIFIER
摘要 <P>PROBLEM TO BE SOLVED: To provide a bias circuit for power amplifier capable of being applied to a high frequency of microwave/millimeter wave/submillimeter wave band by suppressing a ripple voltage &Delta;V of the bias circuit for power amplifier even when a difference frequency &Delta;f is several hundred MHz and smoothing a bias circuit voltage. <P>SOLUTION: The bias circuit for power amplifier includes: a first bonding wire connected to a bias circuit junction point of an output side matching transmission line of a power amplifier; a second bonding wire connected to a termination of the first bonding wire; an open stub transmission line connected to the termination of the first bonding wire; and a bias reservoir capacitor connected to a termination of the second bonding wire. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012124599(A) 申请公布日期 2012.06.28
申请号 JP20100271855 申请日期 2010.12.06
申请人 TOSHIBA CORP 发明人 TAKAGI KAZUTAKA
分类号 H03F3/21;H03F1/32;H03F3/60 主分类号 H03F3/21
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