发明名称 |
RECTANGULAR CAPACITORS FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) AND DUAL-PASS LITHOGRAPHY METHODS TO FORM THE SAME |
摘要 |
A rectangular capacitor for dynamic random access memory (DRAM) and a dual-pass lithography method to form the same are described. For example, a capacitor includes a trench disposed in a first dielectric layer disposed above a substrate. A cup-shaped metal plate is disposed along the bottom and sidewalls of the trench. A second dielectric layer is disposed on and conformal with the cup-shaped metal plate. A trench-fill metal plate is disposed on the second dielectric layer. The second dielectric layer isolates the trench-fill metal plate from the cup-shaped metal plate. The capacitor has a rectangular or near-rectangular shape from a top-down perspective. |
申请公布号 |
WO2012087485(A2) |
申请公布日期 |
2012.06.28 |
申请号 |
WO2011US61958 |
申请日期 |
2011.11.22 |
申请人 |
INTEL CORPORATION;LINDERT, NICK |
发明人 |
LINDERT, NICK |
分类号 |
G08B6/00 |
主分类号 |
G08B6/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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