| 摘要 |
The present invention is to provide a cleaning method to a process for fabricating a semiconductor. The method comprises steps as follows: A semiconductor substrate is first provided. An atomized spray are then continually supplied for a first time interval to clean the semiconductor substrate; and a water film is formed on the surface of the semiconductor substrate at or before a start point of the first time interval to buffer the impact imposed by the atomized spray, wherein the water film is preserved for a second time interval at least partially overlaps the first time interval. |
