| 摘要 |
PURPOSE: A semiconductor memory device and an operating method thereof are provided to improve the reliability of programmed data by reducing interference due to cells around programmed memory cells with a low threshold voltage. CONSTITUTION: A program voltage is checked when a program passes in one memory cell(S401). Programmed data is inputted to an upper bit page about the selected page(S403). A preprogram is performed among the date programmed in the upper bit page up to a pre verification voltage lower than a target voltage by selecting the programmed memory cells(S411-S415). An upper bit page program is performed in the selected page by using data programmed in the input upper bit page(S417). |
