| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve margin of an outer area of a cell by forming a pattern which is wider than a pattern of a cell area in the outer area of the cell. CONSTITUTION: SiON film patterns of multi rows are formed in an outer area of a cell. An SOC(Silicon On Carbon) film pattern is formed by etching an SOC film(150) using the SiON film pattern as an etch mask. A first insulation layer is formed on the sidewalls of the SOC film pattern and the SiON film pattern. A contact hole is formed by removing the SOC film pattern and the SiON film pattern. A layer is etched by using a mask which shields the outer area of the cell.</p> |
