发明名称 P-TYPE SEMICONDUCTOR AND PHOTOELECTRIC ELEMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide a new p-type semiconductor using a CZTS-system compound as a base, being low in cost, and having a relatively high conversion efficiency, and to provide a photoelectric element using the same. <P>SOLUTION: A p-type semiconductor has composition represented by a general formula: (Cu<SB POS="POST">1-x</SB>Ag<SB POS="POST">x</SB>)<SB POS="POST">a</SB>Zn<SB POS="POST">b</SB>Sn<SB POS="POST">c</SB>S<SB POS="POST">d</SB>(here, 0<x&le;0.15, a<b+c, b>c, and a+b+c<d.), and contains a phase having a kesterite structure, and is used for a light absorption layer of a photoelectric element. A photoelectric element using the p-type semiconductor for the light absorption layer is also provided. In the general formula, x is preferably 0.025&le;x&le;0.10. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012124232(A) 申请公布日期 2012.06.28
申请号 JP20100271946 申请日期 2010.12.06
申请人 TOYOTA CENTRAL R&D LABS INC;TOYOTA INDUSTRIES CORP 发明人 FUKANO TATSUO;TAJIMA SHIN;ITO TADAYOSHI;WASHIO TSUKASA;EGUCHI TATSUYA;MAKI TSUYOSHI;AIDA NOBUHIRO;SHIMO TOSHIHISA;TAKAHASHI HIDEKI;NAKAGAWA SATOSHI;OKUDA SHINYA
分类号 H01L31/04 主分类号 H01L31/04
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