| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can lower the forward voltage of a Schottky barrier diode while ensuring the breakdown voltage of a transistor in a configuration where the transistor and the Schottky barrier diode are formed in one chip, and to provide a semiconductor package where the semiconductor device is covered with a resin package. <P>SOLUTION: A semiconductor device 1 includes a semiconductor layer 22, a transistor region D formed in the semiconductor layer 22 to configure a transistor 11, and a diode region C formed in the semiconductor layer 22 to configure a Schottky barrier diode 10. The semiconductor layer 22 in the diode region C is thinner than the semiconductor layer 22 in the transistor region D. <P>COPYRIGHT: (C)2012,JPO&INPIT |
