| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a transistor element in which propagating of dislocation from a GaAs substrate to an HBT structure layer is minimized, and to provide a method of manufacturing an epitaxial wafer for transistor. <P>SOLUTION: In the transistor element, a high electron mobility transistor structure layer 3 is formed on a GaAs substrate 2, and a heterobipolar transistor structure layer 4 is formed on the high electron mobility transistor structure layer 3. Dislocation density of the GaAs substrate 2 is in a range from 10,000 or more to 100,000/cm<SP POS="POST">2</SP>or less, and an etching stopper layer 12 consisting of InGaP and a stabilization layer 21 formed on the etching stopper layer 12 consisting of GaAs are provided between the high electron mobility transistor structure layer 3 and the heterobipolar transistor structure layer 4. <P>COPYRIGHT: (C)2012,JPO&INPIT |
