| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an advanced gate structure that includes a silicided metal gate and silicided source and drain regions, and methods for forming the advanced gate structure. <P>SOLUTION: The present invention provides an advanced gate structure that includes a silicided metal gate, and silicided source and drain regions that abut the silicided metal gate. Specifically, and in broad terms, the present invention provides a semiconductor structure comprising a silicided metal gate of a first silicide metal having a first thickness, and abutting silicided source and drain regions of a second metal having a second thickness which is less than the first thickness and the silicided source and drain regions are aligned to edges of a gate region including at least the silicided metal gate. In addition, the present invention also provides methods for forming the advanced gate structure having the silicided metal gate and the silicided source and drain regions abutting the silicided metal gate. <P>COPYRIGHT: (C)2012,JPO&INPIT |
