| 摘要 |
A method is provided for characterizing a mask having a structure, comprising the steps of: - illuminating said mask under at least one illumination angle with monochromatic illuminating radiation, so as to produce a diffraction pattern of said structure that includes at least two maxima of adjacent diffraction orders, - capturing said diffraction pattern, - determining the intensities of the maxima of the adjacent diffraction orders, - determining an intensity quotient of the intensities. A mask inspection microscope for characterizing a mask in conjunction with the performance of the inventive method is also provided. |
