| 摘要 |
<p>PURPOSE: A method for manufacturing a thin film transistor is provided to improve an electric property of the thin film transistor by including an active layer. CONSTITUTION: A substrate with a preset curvature and flexibility is prepared. An active layer(20) made of oxide semiconductor is formed on the convex surface of the substrate. Compressed stress is applied to the active layer by removing the curvature of the substrate to make the substrate horizontal. A source electrode(30), a drain electrode, a gate insulation layer(50), and a gate electrode(60) are formed on the active layer.</p> |
