SILICON PHOTOELECTRIC MULTIPLIER WITH OPTICAL CROSS-TALK SUPPRESSION DUE TO SPECIAL PROPERTIES OF THE SUBSTRATE

摘要

A cell (1) for a silicon based photoelectric multiplier comprises a substrate (21) of a second conductivity type, a first layer (2) of a first conductivity type, a second layer (3) of a second conductivity type formed on the first layer (2), wherein the first layer (2) and the second layer (3) form a first p-n junction, and wherein the substrate (21) is configured such that in operation of the photoelectric multiplier from a quantity of light stemming from photons produced in the multiplier and propagating towards a backside or side walls of the multiplier a negligible portion returns to a frontside of the multiplier.