Metal-Oxide Semiconductor Field-Effect Transistor haveing structure for electrostatic discahrge protection,申请号KR20100023060-传众专利搜索

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发明名称	Metal-Oxide Semiconductor Field-Effect Transistor haveing structure for electrostatic discahrge protection
摘要
申请公布号	KR101159426(B1)	申请公布日期	2012.06.28
申请号	KR20100023060	申请日期	2010.03.15
申请人		发明人
分类号	H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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