| 摘要 |
<p>PURPOSE: A semiconductor device is provided to prevent a breakdown oscillation of a gate oxide layer by improving a layout of a trench end. CONSTITUTION: A trench(5) is formed from the surface of a P base layer to the surface of a P well layer(3). A gate electrode(7) is selectively formed on a drift layer including the trench. The trench includes a first region and a second region. The first region is extended from a trench end(8) to the surface of the P base layer in a boundary between the P base layer and the P well layer. The second region is extended from the end of the first region on the surface of the P base layer.</p> |
