发明名称 |
Measuring system and imaging device using such a system |
摘要 |
<p>The system has an n-type metal-oxide-semiconductor (N-MOS) reference transistor (242asterisk) with a source connected to an end of a reference mirror branch (236asterisk). An operational amplifier (240) has a negative input connected to the source and an output connected to a gate of the transistor. An N-MOS measurement transistor (242) has a gate connected to the output of the amplifier. A measurement unit measures difference between measurement current (imes1) passing via a measurement bolometer (222) e.g. infrared bolometer, and current (i'ref) passing via a measurement mirror branch (236).</p> |
申请公布号 |
EP2469254(A1) |
申请公布日期 |
2012.06.27 |
申请号 |
EP20110306646 |
申请日期 |
2011.12.13 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES |
发明人 |
DUPONT, BERTRAND;TCHAGASPANIAN, MICHAEL |
分类号 |
G01J5/22 |
主分类号 |
G01J5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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