发明名称 Measuring system and imaging device using such a system
摘要 <p>The system has an n-type metal-oxide-semiconductor (N-MOS) reference transistor (242asterisk) with a source connected to an end of a reference mirror branch (236asterisk). An operational amplifier (240) has a negative input connected to the source and an output connected to a gate of the transistor. An N-MOS measurement transistor (242) has a gate connected to the output of the amplifier. A measurement unit measures difference between measurement current (imes1) passing via a measurement bolometer (222) e.g. infrared bolometer, and current (i'ref) passing via a measurement mirror branch (236).</p>
申请公布号 EP2469254(A1) 申请公布日期 2012.06.27
申请号 EP20110306646 申请日期 2011.12.13
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIESALTERNATIVES 发明人 DUPONT, BERTRAND;TCHAGASPANIAN, MICHAEL
分类号 G01J5/22 主分类号 G01J5/22
代理机构 代理人
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