SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce crack generation when a nitride semiconductor layer is grown by compensating for tensile stress with compressive stress. CONSTITUTION: A secondary seed layer(15) includes a first substance for masking and a second material for secondary seeding. A nucleation layer(20) is grown up on the secondary seed layer. A nitride semiconductor layer(25) is grown up on the nucleation layer. A buffer layer is formed between the nucleation layer and the nitride semiconductor layer.