SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve an electric property by using a transistor whose threshold voltage is controlled. CONSTITUTION: A gate electrode(104) is basically made of tungsten oxide. A gate insulation layer(112) is contacted with the gate electrode. A semiconductor layer(106) partially overlaps the gate electrode by interposing the gate insulation layer. A pair of electrodes are located between the semiconductor layer and the gate insulation layer.