发明名称 Dislocation engineering in single crystal synthetic diamond material
摘要 A single crystal chemical vapour deposition (CVD) synthetic diamond layer comprises a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions. The diamond layer may have a thickness greater than 1 µm, a density of dislocations in the range of 10 â 1x108 cm-2 and a birefringence equal to or less than 5x10-4. The diamond layer may be a {110} or {113} oriented layer. A method of manufacturing the single crystal diamond material is also disclosed.
申请公布号 GB2486794(A) 申请公布日期 2012.06.27
申请号 GB20110021721 申请日期 2011.12.16
申请人 ELEMENT SIX LIMITED 发明人 HARPREET KAUR DHILLON;NICHOLAS MATTHEW DAVIES;RIZWAN UDDIN AHMAD KHAN;DANIEL JAMES TWITCHEN;PHILIP MAURICE MARTINEAU
分类号 C30B29/04;C01B31/06;C23C16/27;C30B25/02 主分类号 C30B29/04
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