发明名称 |
Dislocation engineering in single crystal synthetic diamond material |
摘要 |
A single crystal chemical vapour deposition (CVD) synthetic diamond layer comprises a non-parallel dislocation array, wherein the non-parallel dislocation array comprises a plurality of dislocations forming an array of inter-crossing dislocations, as viewed in an X-ray topographic cross-sectional view or under luminescent conditions. The diamond layer may have a thickness greater than 1 µm, a density of dislocations in the range of 10 â 1x108 cm-2 and a birefringence equal to or less than 5x10-4. The diamond layer may be a {110} or {113} oriented layer. A method of manufacturing the single crystal diamond material is also disclosed. |
申请公布号 |
GB2486794(A) |
申请公布日期 |
2012.06.27 |
申请号 |
GB20110021721 |
申请日期 |
2011.12.16 |
申请人 |
ELEMENT SIX LIMITED |
发明人 |
HARPREET KAUR DHILLON;NICHOLAS MATTHEW DAVIES;RIZWAN UDDIN AHMAD KHAN;DANIEL JAMES TWITCHEN;PHILIP MAURICE MARTINEAU |
分类号 |
C30B29/04;C01B31/06;C23C16/27;C30B25/02 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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