| 摘要 |
FIELD: physics. ^ SUBSTANCE: photocathode includes a dielectric or semiconductor substrate on which there is a layer of photoelectron-emitting n-type semiconductor with band gap Eg1. Quantum dots are grown on the surface of the semiconductor layer from an n-type semiconductor with band gap of the substrate Eg2, decorated by atoms of an electropositive metal with total thickness of up to 3.0 monolayers. Eg2<Eg1. ^ EFFECT: high quantum yield of photoemission and possibility of selectively analysing and detecting incident radiation in different spectral ranges. ^ 4 cl, 5 dwg |
