| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to uniformly control the depth and size of a sidewall contact by using a triple trench process. CONSTITUTION: A first trench is formed by etching a substrate. A first spacer(24A) is formed on both sidewalls of the first trench. A second trench(25) is formed by etching the substrate under the first trench. A second spacer(26A) is formed in the both sidewalls of the second trench. A third trench(27) whose side is expanded is formed by etching the bottom surface of the second trench. A liner film is formed on the surface of the third trench. A sidewall contact is formed to selectively expose one sidewall of the second trench.
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