发明名称 |
METHOD FOR ETCHING OF SILICON SURFACES |
摘要 |
<p>The invention relates to a method for etching of silicon surfaces with the following steps: Furnishing an aqueous alkaline hydrocolloid etching solution containing at least one hydrocolloid, at a temperature of 50° C. to 95° C., bringing the silicon surface in contact with the hydrocolloid etching solution for a specified duration, and Removing the hydrocolloid etching solution from the silicon surface.</p> |
申请公布号 |
EP2467873(A1) |
申请公布日期 |
2012.06.27 |
申请号 |
EP20100720942 |
申请日期 |
2010.06.02 |
申请人 |
RENA GMBH |
发明人 |
EL JAOUHARI, AHMED ABDELBAR;SCHWECKENDIEK, JUERGEN |
分类号 |
H01L21/306;C09K13/02;H01L31/0236 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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