SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL TRANSISTOR

摘要

PURPOSE: A semiconductor device with a vertical channel transistor is provided to improve electrical characteristics in a semiconductor device by reducing interference between bit lines. CONSTITUTION: Provided is semiconductor patterns to the top of substrate First gate patterns(141) are provided to the top of the substrate and extended between semiconductor patterns. Second gate patterns(151) are separated from the first gate patterns while having an interval between semiconductor patterns. A conductive line(111) crosses with the first gate patterns. The second gate patterns include a first part extended along the first gate patterns and a second part extended along conductive lines.