SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase charge carrier mobility in a channel region of a transistor by using a strain-inducing silicon-germanium alloy in a drain region and a source region. CONSTITUTION: A cavity is formed in a semiconductor region near a gate electrode structure of a transistor in a transverse direction. A gate electrode structure(30) is arranged on a channel region(40) of a first silicon-germanium alloy. A strain inducing silicon-germanium alloy is formed in the cavity and is contacted with the first silicon-germanium alloy. The strain inducing silicon-germanium alloy includes carbon and compositions which are different from the first silicon-germanium alloy.