发明名称 POSITIVE PHOTORESIST COMPOSITION AND PATTERNING METHOD OF PHOTORESIST USING THE SAME
摘要 <p>PURPOSE: A positive photo-resist composition and a method for forming photo-resist patterns using the same are provided to prevent the reduction of yield due to coating stains and pattern exfoliation. CONSTITUTION: A positive photo-resist composition includes 10 to 25 weight% of an alkali soluble resin, 1 to 10 weight% of a photo-sensitive compound, 1 to 10 weight% of a cyclic terpene compound, and remaining amount of solvents based on the total weight of the composition. The cyclic terpene compound is limonene or terpinene. The alkali soluble resin is a novolac resin. The photo-sensitive compound is a diazide-based compound. The solvents is one or more selected from a group including 3-methoxylbuthyl acetate, methyl methoxy propionate, butyl acetate, ethyl lactate, gamma butyrolactone, propylene glycol monomethyl ether acetate.</p>
申请公布号 KR20120068462(A) 申请公布日期 2012.06.27
申请号 KR20100130096 申请日期 2010.12.17
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 LEE, EUN SANG;IM, MIN JU;SHIN, HYE RA;KIM, SEONG HYEON
分类号 G03F7/039;G03F7/022;H01L21/027 主分类号 G03F7/039
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