发明名称 |
POSITIVE PHOTORESIST COMPOSITION AND PATTERNING METHOD OF PHOTORESIST USING THE SAME |
摘要 |
<p>PURPOSE: A positive photo-resist composition and a method for forming photo-resist patterns using the same are provided to prevent the reduction of yield due to coating stains and pattern exfoliation. CONSTITUTION: A positive photo-resist composition includes 10 to 25 weight% of an alkali soluble resin, 1 to 10 weight% of a photo-sensitive compound, 1 to 10 weight% of a cyclic terpene compound, and remaining amount of solvents based on the total weight of the composition. The cyclic terpene compound is limonene or terpinene. The alkali soluble resin is a novolac resin. The photo-sensitive compound is a diazide-based compound. The solvents is one or more selected from a group including 3-methoxylbuthyl acetate, methyl methoxy propionate, butyl acetate, ethyl lactate, gamma butyrolactone, propylene glycol monomethyl ether acetate.</p> |
申请公布号 |
KR20120068462(A) |
申请公布日期 |
2012.06.27 |
申请号 |
KR20100130096 |
申请日期 |
2010.12.17 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
LEE, EUN SANG;IM, MIN JU;SHIN, HYE RA;KIM, SEONG HYEON |
分类号 |
G03F7/039;G03F7/022;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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