Improved production of crystalline silicon

摘要

A method for crystalline silicon ingot by directional solidification comprises; providing a crystalline silicon seed layer 7 in a crucible 1, a periphery of the silicon seed layer defining peripheral surface facing an inner wall of the crucible, the periphery of the seed layer comprising at least one peripheral seed tile; providing silicon feedstock 8 above the seed layer; melting the feedstock and an upper part of the seed layer; directionally solidifying the molten silicon; wherein each of the peripheral seed tiles comprises a first {110} crystallographic plane aligned substantially parallel to an adjacent face of the inner wall of the crucible and a second {110} crystallographic plane which is normal to the direction of solidification. The first crystallographic plane may be aligned within 15 degrees of parallel to the adjacent face of the inner wall of the crucible. A loaded crucible for use with the method is also disclosed.