HARDMASK COMPOSITION AND METHOD OF FORMING PATTERNS AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING THE PATTERNS

摘要

PURPOSE: A hard mask composition, a method for forming patterns using the same, and a semiconductor integrated circuit device including the same are provided to improve optical characteristic by securing resistance to multiple etching and resistance to etching gas. CONSTITUTION: A hard mask composition includes an aromatic ring-containing compound and a solvent. The aromatic ring-containing compound includes a structural unit represented by chemical formula 1. In chemical formula 1, A is -CH- or a multi-valent aromatic ring; B is a substituted or non-substituted C1 to C20 alkylene group, a substituted or non-substituted C3 to C30 cycloalkylene group, a substituted or non-substituted C6 to C30 arylene group, a substituted or non-substituted C3 to C30 cycloalkenylene group, a substituted or non-substituted C7 to C20 arylalkylene group, a substituted or non-substituted C1 to C20 heteroalkylene group, a substituted or non-substituted C2 to C30 heterocycloalkylene group, a substituted or non-substituted C2 to C30 heteroarylene group, a substituted or non-substituted C2 to C30 alkenylene group, a substituted or non-substituted C2 to C30 alkynylene group, a halogen group, or the combination of the same; and L is a single bond, a substituted or non-substituted C1 to C20 alkylene group, a substituted or non-substituted C3 to C30 cycloalkylene group, a substituted or non-substituted C6 to C30 arylene group, a substituted or non-substituted C3 to C30 cycloalkenylene group, a substituted or non-substituted C7 to C20 arylakylene group, a substituted or non-substituted C1 to C20 heteroalkylene group, a substituted or non-substituted C2 to C30 heterocycloalkylene group, a substituted or non-substituted C3 to C30 heteroarylene group, a substituted or non-substituted C2 to C30 alkenylene group, a substituted or non-substituted C2 to C30 alkynylene group, or the combination of the same.