发明名称 |
A BIPOLAR JUNCTION TRANSISTOR HAVING A HIGH GERMANIUM CONCENTRATION IN A SILICON-GERMANIUM LAYER AND A METHOD FOR FORMING THE BIPOLAR JUNCTION TRANSISTOR |
摘要 |
<p>A method for forming a germanium-enriched region in a heterojunction bipolar transistor and a heterojunction bipolar transistor comprising a germanium-enriched region. A base having a silicon-germanium portion is formed over a collector. Thermal oxidation of the base causes a germanium-enriched region to form on a surface of the silicon-germanium portion subjected to the thermal oxidation. An emitter is formed overlying the germanium-enriched portion region. The germanium-enriched region imparts advantageous operating properties to the heterojunction bipolar transistor, including improved high-frequency/high-speed operation.</p> |
申请公布号 |
KR20120068996(A) |
申请公布日期 |
2012.06.27 |
申请号 |
KR20127015010 |
申请日期 |
2005.03.10 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
GRIGLIONE MICHELLE DENISE |
分类号 |
H01L29/73;H01L21/316;H01L21/328;H01L21/331;H01L29/10;H01L29/737 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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