| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a void generated from a solder bump after melting by meting the solder bump. CONSTITUTION: A second substrate(4) having a second solder bump(3) is laminated on a first substrate(2) having a first solder bump(1). A laminate of the first substrate and the second substrate, in which the first solder bump and the second solder bump are temporarily fixed, is arranged in a furnace. The furnace in which the laminate is arranged has a decompression atmosphere inside thereof. A carboxylic acid gas is introduced into the furnace of the decompression atmosphere. Temperature inside the furnace rises to a temperature range over the melting temperature of the first and the second solder bumps and the first solder bump and the second solder bump are welded.
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